An Eight-Element 370–410-GHz Phased-Array Transmitter in 45-nm CMOS SOI With Peak EIRP of 8–8.5 dBm

This paper presents a 370-410-GHz phased-array transmitter, which is based on a W-band distribution network, amplifiers, and vector modulators, feeding a linear eight-element quadrupler array. The quadrupler outputs are connected to high-efficiency microstrip antennas. The design is scalable to a large number of elements, since most of the chip operates at W-band frequencies. The chip is built using 45-nm CMOS silicon on insulator technology, which offers transistors with ft and fmax of 250-260 GHz referenced to the top metal. The phased array results an equivalent isotropic radiated power (EIRP) of 5 dBm at 375-405 dBm with a peak EIRP of 7-8.5 dBm at 380-400 GHz and with a pattern scan of +/-35° in one plane. To the best of our knowledge, this is one of the first demonstrations of a phased array operating at 400 GHz using CMOS technology and with wide operating bandwidth.

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