论文信息 - Growth and characterization of 4H-SiC by horizontal hot-wall CVD

Growth and characterization of 4H-SiC by horizontal hot-wall CVD

4H-SiC layers have been homoepitaxially grown at 1500/spl deg/C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 /spl mu/m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3/spl times/10 cm/sup -3/ during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator. The FWHM of X-ray /spl omega/-rocking curves show 9-15 arcsecs in five different areas of a 32 /spl mu/m-thick 4H-SiC epilayer. The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.

[1] H. Matsunami,et al. High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition , 2002 .

[2] H. Matsunami,et al. Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition , 2001 .

[3] A. Burk,et al. The role of excess silicon and in situ etching on 4HSiC and 6HSiC epitaxial layer morphology , 1996 .

[4] A. Henry,et al. HIGH QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR DEPOSITION , 1995 .