论文信息 - Tunneling and Ionization Phenomena in GaAs Pin Diodes

Tunneling and Ionization Phenomena in GaAs Pin Diodes

We present a combined theoretical and experimental analysis of breakdown phenomena in GaAs pin diodes. The measured reverse characteristics indicating a soft breakdown for intrinsic regions smaller than 50nm are nicely interpreted via a self-consistent Monte Carlo simulation which allows the separation of tunneling an ionization processes.

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