论文信息 - Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)] - 字舞流文

Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)]