论文信息 - n-Si/SnO2 interface prepared by spray pyrolysis for photovoltaic applications

n-Si/SnO2 interface prepared by spray pyrolysis for photovoltaic applications

Spray pyrolysis was used to fabricate n-Si(1OO)/SiO2/SnO2 heterojunctions in view of photoconversion of solar energy. The effects of the temperature Tf at which the Sn02 film is formed (400-500°C) are particularly addressed. Direct imaging of the interfacial Si02 layer by HRTEM is presented, showing the relatively abrupt character of the interfaces. It is shown that (i) the open-circuit photopotential Voc strongly decreases when Tf is incresased (ii) at a given Tf, Voc presents a maximum as a function of the interfacial Si02 thickness. These results are discussed in terms of charge accumulation and current limitation at the Si/Si02 boundary.

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