Novel metalorganic chemical vapor deposition system for GaN growth
暂无分享,去创建一个
[1] H. Amano,et al. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .
[2] H. Amano,et al. Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3 , 1984 .
[3] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .
[4] H. Amano,et al. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate , 1988 .
[5] I. Akasaki,et al. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE , 1986 .