Advanced Optical Masks

[1]  Paul Sandland Automatic Inspection Of Mask Defects , 1977, Other Conferences.

[2]  M. Levenson,et al.  Improving resolution in photolithography with a phase-shifting mask , 1982, IEEE Transactions on Electron Devices.

[3]  Ian A. Cruttwell A Fully Automated Pattern Inspection System For Reticles & Masks , 1983, Advanced Lithography.

[4]  Y. Watakabe,et al.  High performance very large scale integrated photomask with a silicide film , 1986 .

[5]  H. Fukuda,et al.  Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks , 1991 .

[6]  H. Morimoto,et al.  Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication , 1993, Proceedings of IEEE International Electron Devices Meeting.

[7]  Masahiro Takahashi,et al.  Chromium-based attenuated phase shifter for DUV exposure , 1994, Photomask Technology.

[8]  Kunihiro Hosono,et al.  Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film , 1994, Advanced Lithography.

[9]  Nobuyuki Yoshioka,et al.  Phase measurement system with transmitted UV light for phase-shifting mask inspection , 1994, Photomask and Next Generation Lithography Mask Technology.

[10]  Derek B. Dove,et al.  New mask evaluation tool: the microlithography simulation microscope aerial image measurement system , 1994, Advanced Lithography.

[11]  Anthony Vacca,et al.  Photomask production integration of KLA STARlight 300 system , 1995, Photomask Technology.

[12]  Takahiro Ode,et al.  Transmittance measurement with interferometer system , 1996, Photomask and Next Generation Lithography Mask Technology.

[13]  Tadashi Matsuo,et al.  Zr-based films for attenuated phase-shift mask , 1997, Photomask and Next Generation Lithography Mask Technology.

[14]  Norio Nakayama,et al.  Development of a pellicle for use with an ArF excimer laser , 1997, Photomask and Next Generation Lithography Mask Technology.

[15]  Franklin M. Schellenberg,et al.  SEMATECH J111 project: OPC validation , 1998, Advanced Lithography.

[16]  Masaki Takeuchi,et al.  Properties of our developing next-generation photomask substrate , 1999, Photomask and Next Generation Lithography Mask Technology.

[17]  Masahiro Hirano,et al.  New silica glass for 157-nm lithography , 1999, Advanced Lithography.

[18]  Toshiaki Motonaga,et al.  The development of bilayered TaSiOx-HTPSM (1) , 2001 .

[19]  Gerd Scheuring,et al.  First results from a new 248-nm CD measurement system for future mask and reticle generation , 2001, European Mask and Lithography Conference.

[20]  Masashi Ataka,et al.  Calibration and long-term stability evaluation of photo mask CD-SEM utilizing JQA standard , 2002, Photomask Technology.

[21]  Ryoji Hagiwara,et al.  Advanced FIB mask repair technology for 100 nm/ArF lithography , 2001, Photomask Technology.

[22]  Satoshi Yusa,et al.  Development of attenuating PSM shifter for F2 and high-transmission ArF lithography , 2003, Photomask Japan.

[23]  Nobuyuki Yoshioka,et al.  Application of atomic force microscope to 65-nm node photomasks , 2004, Photomask Japan.