Solar-Blind Photodetectors for Harsh Electronics

[1]  Z. Allam,et al.  High-performance solar-blind photodetector based on AlGaN/GaN heterostructure , 2014, 2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV).

[2]  Wei-Cheng Lien,et al.  4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 $^{\circ}\hbox{C}$ , 2012, IEEE Electron Device Letters.

[3]  Shih-Ting Lin,et al.  Lensless intracavity focusing in a passively Q-switched all-fiber laser using the mode-field-area mismatch. , 2012, Optics letters.

[4]  Yung-Yu Chen,et al.  AlN/3C–SiC Composite Plate Enabling High‐Frequency and High‐Q Micromechanical Resonators , 2012, Advanced materials.

[5]  Y. Chu,et al.  n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection. , 2012, Optics letters.

[6]  D. Tsai,et al.  Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal Schottky photodetectors improved by ZnO nanorod arrays. , 2011, ACS nano.

[7]  A. Pisano,et al.  Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection , 2011, IEEE Electron Device Letters.

[8]  Tianyou Zhai,et al.  Ultrahigh‐Performance Solar‐Blind Photodetectors Based on Individual Single‐crystalline In2Ge2O7 Nanobelts , 2010, Advanced materials.

[9]  Zhong Lin Wang,et al.  Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect. , 2010, ACS nano.

[10]  Kan Bun Cheng,et al.  Growth of 3C-SiC Thin Film on AlN/Si(100) with Atomically Abrupt Interface via Tailored Precursor Feeding Procedure , 2010 .

[11]  Chaoyi Yan,et al.  Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time , 2010 .

[12]  Wen‐Di Li,et al.  Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography. , 2010, Optics express.

[13]  Steven L. Garverick,et al.  Extreme temperature 6H‐SiC JFET integrated circuit technology , 2009 .

[14]  K. Jin,et al.  Solar-blind deep-ultraviolet photodetectors based on an LaAlO(3) single crystal. , 2009, Optics letters.

[15]  Frank Scholze,et al.  Recent developments of wide-bandgap semiconductor based UV sensors , 2009 .

[16]  S. Tanner,et al.  Innovative technique for tailoring intrinsic stress in reactively sputtered piezoelectric aluminum nitride films , 2009 .

[17]  Wei Liu,et al.  Blue to deep UV light emission from a p-Si/AlN/Au heterostructure , 2009 .

[18]  A. Touboul,et al.  Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs , 2008, IEEE Transactions on Nuclear Science.

[19]  U. Kroth,et al.  New developments on diamond photodetector for VUV solar observations , 2008 .

[20]  B. Giordanengo,et al.  193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors , 2008 .

[21]  K. Sundaram,et al.  Amorphous-SiCBN-Based Metal–Semiconductor–Metal Photodetector for High-Temperature Applications , 2007, IEEE Electron Device Letters.

[22]  AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain , 2007 .

[23]  Wayne A. Anderson,et al.  Si-based metal–semiconductor–metal photodetectors with various design modifications , 2007 .

[24]  J. Lin,et al.  200nm deep ultraviolet photodetectors based on AlN , 2006 .

[25]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[26]  Yu-Lun Chueh,et al.  Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties , 2006 .

[27]  M. Unlu,et al.  Introduction to the Issue on Photodetectors and Imaging , 2004 .

[28]  High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[29]  E. Monroy,et al.  Wide-bandgap semiconductor ultraviolet photodetectors , 2003 .

[30]  Reinhart Job,et al.  Sensors and smart electronics in harsh environment applications , 2001 .

[31]  M. Razeghi,et al.  The development of nitride-based UV photodetectors , 2000 .

[32]  A. Vescan,et al.  High temperature, high voltage operation of diamond Schottky diode , 1998 .

[33]  David J. Smith,et al.  X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001) , 1997 .

[34]  R. Davis,et al.  Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures , 1996 .

[35]  S. Bengtsson,et al.  Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials , 1996 .

[36]  M. Razeghia,et al.  Semiconductor ultraviolet detectors , 1996 .

[37]  Charles L. Joseph,et al.  UV image sensors and associated technologies , 1995 .

[38]  Stephen Y. Chou,et al.  Nanoscale tera-hertz metal-semiconductor-metal photodetectors , 1992 .

[39]  J. Soole,et al.  InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications , 1991 .

[40]  E. G. Stassinopoulos,et al.  The space radiation environment for electronics , 1988, Proc. IEEE.

[41]  P. Dobson Physics of Semiconductor Devices (2nd edn) , 1982 .

[42]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.