Mean lifetimes of levels in 32P and 32S (populated in 29Si(α, p) and 29Si(α, n) reactions)

Lifetimes of low-lying levels in 32P and 32S have been measured using the Doppler shift attenuation method. The levels were populated via the 29Si( alpha , p)32P and 29Si( alpha , n)32S reactions at alpha particle energies of 8.0 and 9.5 MeV. Seven new lifetimes and two new lifetime limits have been measured in 32P and one new lifetime has been measured in 32S. The principal decay modes of some levels have been measured.

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