论文信息 - Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction

Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction

A thin (∼400 A) LPE In1−xGaxP1−zAsz ’’trap’’ on the p‐type side of an InP junction [Eg(InP)−Eg(InGaPAs) ≡ΔE∼245 meV], is filled by injection to a high enough density to make it possible to observe confined‐particle states and laser modes in a 70‐meV (≳600 A) range. The position of the modes is in good agreement with the transition energies expected for a finite potential well.

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