论文信息 - Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells - 字舞流文

Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

K. Chin | A. Delahoy | Zimeng Cheng | Zhaoqian Su

[1] D. Kuciauskas,et al. Dependence of the minority-carrier lifetime on the stoichiometry of CdTe using time-resolved photoluminescence and first-principles calculations. , 2013, Physical review letters.

[2] K. Chin,et al. A Study of Light-Sensitive Ideality Factor and Voltage-Dependent Carrier Collection of CdTe Solar Cells in Forward Bias , 2013, IEEE Journal of Photovoltaics.

[3] K. Chin. Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics , 2012 .

[4] M. Young,et al. Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells☆ , 2009 .

[5] D. Macdonald,et al. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon , 2004 .

[6] F. Hasoon,et al. Deep-level impurities in CdTe/CdS thin-film solar cells , 2000 .

[7] Y. Rosenwaks,et al. Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals , 1998 .

[8] Y. Rosenwaks,et al. Recombination dynamics at InP/liquid interfaces , 1993 .

[9] J. Sites,et al. Analysis of apparent quantum efficiency , 1990 .

[10] A. Poruba,et al. Diffusion length in CdTe by measurement of photovoltage spectra in CdS/CdTe solar cells , 2001 .