Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate
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G. Ferro | D. Tournier | M. Lazar | F. Cauwet | J. Lorenzzi | D. Carole | N. Jegenyes
[1] G. Ferro,et al. Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas , 2011 .
[2] G. Ferro,et al. Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism , 2008 .
[3] G. Ferro,et al. Nucleation of 3C–SiC on 6H–SiC from a liquid phase , 2007 .
[4] P. Neudeck,et al. Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces , 2002 .