Cadmium zinc telluride and its use as a nuclear radiation detector material

We present a comprehensive review of the material properties of cadmium zinc telluride (CZT, Cd1ˇxZnxTe) with zinc content xa 0:1‐0.2. Particular emphasis is placed on those aspects of this material related to room temperature nuclear detectors. A review of the structural properties, charge transport, and contacting issues and how these are related to detector and spectrometer performance is presented. A comprehensive literature survey and bibliography are also included. # 2001 Elsevier Science B.V. All rights reserved.

[1]  R. F. Brebrick,et al.  The Hg-Cd-Zn-Te phase diagram , 1992 .

[2]  C. Dj,et al.  First-principles study of DX centers in CdTe, ZnTe, and CdxZn1-xTe alloys. , 1995 .

[3]  Large volume room temperature gamma-ray spectrometers from CdxZn1−xTe , 1996 .

[4]  M. Dudley,et al.  Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography , 1997 .

[5]  Jones,et al.  Determination of the dependence of the band-gap energy on composition for Cd1-xZnxTe. , 1992, Physical review. B, Condensed matter.

[6]  P. M. Raccah,et al.  Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates , 1985 .

[8]  V. Swaminathan,et al.  Materials aspects of GaAs and InP based structures , 1991 .

[9]  J. Weese,et al.  Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularization method , 1992 .

[10]  L. Ben-dor,et al.  Vertical unseeded vapor growth and characterization of Cd0.95Zn0.05Te crystals , 1985 .

[11]  Device simulation and optimization of laterally-contacted-unipolar-nuclear detector , 1999 .

[12]  K. Abe,et al.  Elastic and photoelastic constants of ZnTe measured by Brillouin scattering , 1977 .

[13]  Robert Triboulet,et al.  Cdte and CdZnTe crystal growth by horizontal bridgman technique , 1990 .

[14]  W. Stadler,et al.  Defects in CdTe and Cd1−xZnxTe , 1996 .

[15]  R. Triboulet,et al.  Positron trapping in vacancies in indium doped CdTe crystals , 1991 .

[16]  Mapping high-pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te , 1997 .

[17]  J. Davies,et al.  Electron Paramagnetic Resonance Investigation of Pb‐ and Ge‐doped CdTe , 1984 .

[18]  E. Pell.  Ion Drift in an n‐p Junction , 1960 .

[19]  Haim Hermon,et al.  Analysis of Cd1-xZnxTe microstructure , 1997, Optics & Photonics.

[20]  Kelvin G. Lynn,et al.  Trapping properties of cadmium vacancies in Cd 1 − x Zn x Te , 1997 .

[21]  R. Tenne,et al.  Zinc segregation in CdZnTe grown under Cd/Zn partial pressure control , 1992 .

[22]  W. Mönch.  Semiconductor Surfaces and Interfaces , 1994 .

[23]  C. J. Miner,et al.  A spatially resolved spectrally resolved photoluminescence mapping system , 1990 .

[24]  Marie A. Wright.  Feature: Virtual Private Network Security , 2000 .

[25]  Y. P. Varshni.  Temperature dependence of the energy gap in semiconductors , 1967 .

[26]  S. Takeuchi,et al.  Observation of dislocations in cadmium telluride by cathodoluminescence microscopy , 1979 .

[27]  J. Pautrat,et al.  Shallow Acceptors in Cadmium Telluride , 1982 .

[28]  J. Kennedy,et al.  Evidence for bond strengthening in Cd1−xZnxTe (x=0.04) , 1985 .

[29]  J. S. King,et al.  Phonon dispersion and phonon densities of states for ZnS and ZnTe , 1974 .

[30]  K. Chattopadhyay,et al.  Large volume imaging arrays for gamma-ray spectroscopy , 1999 .

[31]  Peter Capper,et al.  Properties of Narrow-Gap Cadmium-Based Compounds , 1995 .

[32]  Patricia M. Mooney,et al.  Photo‐deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors , 1983 .

[33]  T. S. Gilbert,et al.  Influence Of Structural Defects And Zinc Composition Variation On The Device Response Of Cd l-x Zn x Te Radiation Detectors , 1997 .

[34]  C. Genzel,et al.  Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradients , 1990 .

[35]  L. Verger,et al.  Characterization of CdZnTe and CdTe:Cl materials and their relationship to X- and γ-ray detector performance , 1996 .

[36]  K. Cherkaoui,et al.  Properties of Cd1−xZnxTe crystals grown by high pressure Bridgman for nuclear detection , 1998 .

[37]  Zhong He,et al.  Direct measurement of electron drift parameters using depth sensing single carrier CdZnTe detectors , 1997 .

[38]  Saminadayar,et al.  Shallow donors in CdTe. , 1990, Physical review. B, Condensed matter.

[39]  H. Ralph.  The degeneracy factor of the gold acceptor level in silicon , 1978 .

[40]  E. Molva,et al.  Acceptor states in CdTe and comparison with ZnTe. General trends , 1984 .

[41]  Yasuhiro Tomita,et al.  Performance of a new Schottky CdTe detector for hard x-ray spectroscopy , 1998, Optics + Photonics.

[42]  A. Shor,et al.  CdTe and CdZnTe Room-Temperature X-Ray and Gamma Ray Detectors and Imaging Systems , 1997 .

[43]  P. Siffert,et al.  The interaction of copper with structural defects in THM grown cadmium telluride , 1989 .

[44]  Characteristics of p‐i‐n Junctions Produced by Ion‐Drift Techniques in Silicon , 1962 .

[45]  Feng,et al.  Optical phonons in Cd1-xZnxTe. , 1990, Physical review. B, Condensed matter.

[46]  R. Sudhaesanan,et al.  Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design , 1997 .

[47]  Feng,et al.  Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys. , 1993, Physical review. B, Condensed matter.

[48]  Beatrice Fraboni,et al.  Deep energy levels in CdTe and CdZnTe , 1998 .

[49]  R. Bechmann,et al.  Numerical data and functional relationships in science and technology , 1969 .

[50]  Victor Ivanov,et al.  Advances in high-resolution CdTe and large-volume CdZnTe detectors , 1997, Optics & Photonics.

[51]  H. Wiedemeier,et al.  Defects in CdTe single crystals grown by very fast vapor growth technique , 1995 .

[52]  D. Chadi,et al.  Microscopic structure of DX centers of column III and VII impurities in CdTe , 1995 .

[53]  P. Siffert,et al.  Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM , 1996 .

[54]  D. Wehe,et al.  1-D position sensitive single carrier semiconductor detectors , 1996 .

[55]  E. Eissler,et al.  Role of cadmium vacancy-related defects in CdTe nuclear detectors , 1995 .

[56]  R. B. Lauer,et al.  Photoelectronic Properties of Graded Composition Crystals of II‐VI Semiconductors , 1971 .

[57]  Paul N. Luke,et al.  Coplanar-grid detector with single-electrode readout , 1997, Optics & Photonics.

[58]  W. E. Collins,et al.  Investigation of electrical contacts for Cd/sub 1-x/Zn/sub x/Te nuclear radiation detector , 1997 .

[59]  T. Schlesinger,et al.  CHAPTER 9 - Cd1−xZnxTe Spectrometers for Gamma and X-Ray Applications , 1995 .

[60]  T. Feltgen,et al.  State of the art of (Cd,Zn)Te as gamma detector , 1999 .

[61]  D. Kranzer.  Hall and drift mobility of polar p-type semiconductors : I. Theory? , 1973 .

[62]  D. Chattopadhyay.  Electron mobility in Cd0.8Zn0.2Te , 1994 .

[63]  P. Luke,et al.  Performance of CdZnTe coplanar-grid gamma-ray detectors , 1995 .

[64]  Kazuhiko Suzuki,et al.  Drift mobility and photoluminescence measurements on high resistivity Cd1−xZnxTe crystals grown from Te-Rich solution , 1996 .

[65]  C. Jacoboni,et al.  Hole Transport in Polar Semiconductors , 1972 .

[66]  E. Molva,et al.  Photoluminescence studies in N, P, As implanted cadmium telluride , 1983 .

[67]  M. Berding.  Annealing conditions for intrinsic CdTe , 1999 .

[68]  Uri Lachish.  The role of contacts in semiconductor gamma radiation detectors , 1998 .

[69]  J. F. Schetzina,et al.  Properties of CdZnTe crystals grown by a high pressure Bridgman method , 1992 .

[70]  J. Chelikowsky,et al.  Electronic Structure and Optical Properties of Semiconductors , 1989 .

[71]  B. E. Dean,et al.  High quality, single crystal CdTe grown by a modified horizontal Bridgman technique , 1988 .

[72]  A. Melnikov,et al.  Growth of CdZnTe single crystals for radiation detectors , 1999 .

[73]  M. Martini,et al.  Trapping and detrapping effects in lithium-drifted germanium and silicon detectors , 1970 .

[74]  A. Zunger,et al.  A universal trend in the binding energies of deep impurities in semiconductors , 1984 .

[75]  M. R. Squillante,et al.  Large, High Resolution CdTe Gamma Ray Sensors , 1986, IEEE Transactions on Nuclear Science.

[76]  T. Taguchi.  Crystal Growth and Neutral‐Acceptor Bound‐Exciton Emission of ZnCdTe by THM with Te Solvent , 1983 .

[77]  Kelvin G. Lynn,et al.  Improved CdZnTe detectors grown by vertical Bridgman Process , 1997 .

[78]  W. E. Collins,et al.  Recent CdZnTe detector fabrication developments , 1997, Optics & Photonics.

[79]  Albert Rose,et al.  Concepts in photoconductivity and allied problems , 1963 .

[80]  R. Davies,et al.  The role of deep‐level centers and compensation in producing semi‐insulating GaAs , 1983 .

[81]  B. Šantić,et al.  Thermoelectric effect spectroscopy of deep levels—application to semi‐insulating GaAs , 1990 .

[82]  Yael Nemirovsky,et al.  Study of the charge collection efficiency of CdZnTe radiation detectors , 1996 .

[83]  G. Feuillet,et al.  Molecular Beam Epitaxial Growth of Cd l-x zn x Te Matched to HgCdTe Alloys , 1986 .

[84]  P. Luke.  Single-polarity charge sensing in ionization detectors using coplanar electrodes , 1994 .

[85]  H. Glass,et al.  Improvements in production of CdZnTe crystals grown by the Bridgman method , 1998 .

[86]  Tuviah E. Schlesinger,et al.  Modeling and simulation of uniformity effects in Cd/sub 1-x/Zn/sub x/Te gamma-ray spectrometers , 1998 .

[87]  R. James,et al.  Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements , 1999 .

[88]  Thomas H. Prettyman,et al.  Theoretical framework for mapping pulse shapes in semiconductor radiation detectors , 1999 .

[89]  P. Siffert,et al.  Effects of copper in high resistivity cadmium telluride , 1988 .

[90]  J. Windheim,et al.  Hall effect measurements on CdTe electrodeposited from tri-n-butylphosphine telluride , 1992 .

[91]  K. Shim,et al.  Electronic structure of ternary alloy semiconductors , 1996 .

[92]  G. Neumark.  Are impurities the cause of ’’self’’‐compensation in large‐band‐gap semiconductors? , 1980 .

[93]  P. Siffert,et al.  Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements , 1975 .

[94]  Glenn F. Knoll,et al.  Fundamentals of Semiconductor Detectors for Ionizing Radiation , 1993 .

[95]  F. A. Kröger,et al.  Precipitation in pure and indium-doped CdTe as a function of stoichiometry , 1975 .

[96]  R. Triboulet,et al.  Positron trapping at native vacancies in CdTe crystals: In doping effect , 1993 .

[97]  Hsu,et al.  Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTe. , 1987, Physical review letters.

[98]  Weber,et al.  Lattice relaxation of DX-like donors in ZnxCd1-xTe. , 1989, Physical review. B, Condensed matter.

[99]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[100]  Haim Hermon,et al.  Characterization of CZT detectors grown from horizontal and vertical Bridgman , 2000, SPIE Optics + Photonics.

[101]  K. Benz,et al.  Excitonic line broadening in bulk grown Cd1−xZnxTe , 1992 .

[102]  K. T. Chen,et al.  Detection and Electrical Properties of Cd1-xZnxTe Detectors at Elevated Temperatures. , 1996, Journal of X-ray science and technology.

[103]  J. Kwak,et al.  Study on ta diffusion barrier in Al/Si system , 1999 .

[104]  J. Bean,et al.  Microscopic Defects and Infrared Absorption in Cadmium Telluride , 1975 .

[105]  Arnold Burger,et al.  Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance , 1997 .

[106]  Park,et al.  Bulk lattice instability in II-VI semiconductors and its effect on impurity compensation. , 1995, Physical review letters.

[107]  M. Godlewski,et al.  EPR Measurements of Chromium Impurity Photoionization Transitions in CdTe , 1980 .

[108]  Jacek A. Majewski,et al.  A novel method of crystal growth by physical vapour transport and its application to CdTe , 1992 .

[109]  P. Siffert,et al.  Status of semi-insulating cadmium telluride for nuclear radiation detectors , 1992 .

[110]  S. Pantelides.  Deep Centers in Semiconductors , 1986 .

[111]  R. Zucca,et al.  Electrical compensation in semi‐insulating GaAs , 1977 .

[112]  Ralph B. James,et al.  Optical studies of the internal electric field distributions of CdZnTe detectors under bias conditions , 1997 .

[113]  W. E. Collins,et al.  Study of oxidized cadmium zinc telluride surfaces , 1997 .

[114]  D. Look,et al.  Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally Stimulated Current Measurements , 1997 .

[115]  D. Gillies,et al.  Growth of cadmium-zinc telluride crystals by controlled seeding “contactless” physical vapor transport , 1996 .

[116]  G. Brémond,et al.  Properties of the titanium related level in Cd0.96Zn0.04Te crystals , 1998 .

[117]  M. Goorsky,et al.  Role of misfit dislocations on pseudomorphic high electron mobility transistors , 1995 .

[118]  M. Schieber,et al.  Vapor growth of HgI2 by periodic source or crystal temperature oscillation , 1976 .

[119]  Thomas H. Prettyman,et al.  Method for mapping charge pulses in semiconductor radiation detectors , 1998 .

[120]  J. F. Butler,et al.  CdTe low level gamma detectors based on a new crystal growth method , 1988 .

[121]  R. Sharma,et al.  The Cd-Te (cadmium-tellurium) system , 1989 .

[122]  P. Mascher,et al.  Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy , 1999 .

[123]  Ralph B. James,et al.  Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity , 1998, Optics + Photonics.

[124]  K. Zanio,et al.  Semiconductors and Semimetals, Vol. 13 (Cadmium Telluride) , 1978 .

[125]  Richard H. Stulen,et al.  Investigation of copper electrodes for mercuric iodide detector applications , 1990 .

[126]  Jack Tueller,et al.  Radiation damage and activation of CdZnTe by intermediate energy neutrons , 1996, Optics & Photonics.

[127]  D. Rode.  Electron Mobility in Direct-Gap Polar Semiconductors , 1970 .

[128]  Sorab K. Ghandhi,et al.  VLSI fabrication principles , 1983 .

[129]  E. I. Ko,et al.  The Wet Etching of CdZnTe Substrates for OMVPE Growth , 1992 .

[130]  Arnold Burger,et al.  Charge‐carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors , 1993 .

[131]  J. D. Wiley.  Polar Mobility of Holes in III-V Compounds , 1971 .

[132]  J. Weese.  A reliable and fast method for the solution of Fredhol integral equations of the first kind based on Tikhonov regularization , 1992 .

[133]  F. Bassani,et al.  Indium doping of CdTe and Cd1−xZnxTe by molecular‐beam epitaxy: Uniformly and planar‐doped layers, quantum wells, and superlattices , 1992 .

[134]  Jasprit Singh,et al.  Physics of Semiconductors and Their Heterostructures , 1992 .

[135]  Robert Triboulet,et al.  Growth and characterization of the complete Cd1-xZnxTe alloy series , 1983 .

[136]  David R. Rhiger,et al.  HgCdTe/CdZnTe P-I-N high-energy photon detectors , 1996 .

[137]  W. Wilcox,et al.  Effect of thermal annealing on the microstructure of CdTe and Cd1-xZnxTe crystals , 1993 .

[138]  T. K. Bergstresser,et al.  Electronic Structures of Semiconductor Alloys , 1970 .

[139]  Stephan W Koch,et al.  Introduction to semiconductor optics , 1993 .

[140]  R. James,et al.  Resistivity variation of semi-insulating Cd1−xZnx Te in relationship to alloy composition , 1999 .

[141]  B. Yang,et al.  In-situ measurement of growth rate by laser diffraction during CdTe single crystal growth from the vapour phase , 1995 .

[142]  E. J. Morton,et al.  Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias , 1996 .

[143]  Csaba Szeles,et al.  Growth and properties of semi-insulating CdZnTe for radiation detector applications , 1998, Optics + Photonics.

[144]  C. Kirkpatrick,et al.  Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs , 1982 .

[145]  Meyer,et al.  F center in CdTe. , 1992, Physical review. B, Condensed matter.

[146]  P. K. Nag,et al.  Passivation of CdZnTe surfaces by oxidation in low energy atomic oxygen , 1999 .

[147]  P. Luke.  Unipolar charge sensing with coplanar electrodes-application to semiconductor detectors , 1995 .

[148]  Klaus-Werner Benz,et al.  Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors , 1994 .

[149]  L. Shcherbak,et al.  Self-compensation studies in Cd-saturated In-doped CdTe , 1996 .

[150]  T. Schlesinger,et al.  Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy , 1999 .

[151]  R. Krause-Rehberg,et al.  Review of defect investigations by means of positron annihilation in II-VI compound semiconductors , 1998 .

[152]  H. Baker,et al.  Alloy phase diagrams , 1992 .

[153]  H. Höchst,et al.  ZnTe: A potential interlayer to form low resistance back contacts in CdS/CdTe solar cells , 1993 .

[154]  C. Ye,et al.  Studies of defects in n‐type CdTe by charge transient spectroscopy , 1990 .

[155]  Y. Marfaing.  Self-compensation in II–VI compounds , 1981 .

[156]  Meyer,et al.  Identification of the chlorine A center in CdTe. , 1992, Physical review. B, Condensed matter.

[157]  K. Lynn,et al.  Deep electronic levels in high-pressure Bridgman Cd1−xZnxTe , 1996 .

[158]  K. Zanio.  Purification of CdTe from, tellurium-rich solutions , 1974 .

[159]  P. Siffert,et al.  Cadmium Telluride Nuclear Radiation Detectors , 1975, IEEE Transactions on Nuclear Science.

[160]  M. Jung,et al.  A new method for evaluation of transport properties in CdTe and CZT detectors , 1999 .

[161]  Paul Siffert,et al.  Deep levels in semi-insulating CdTe , 1993 .

[162]  N. Motta,et al.  Random distribution and miscibility of Cd1-xZnxTe alloy from exafs , 1985 .

[163]  B. Burkey,et al.  Persistent photoconductivity in donor‐doped Cd1−xZnxTe , 1976 .

[164]  G. Brémond,et al.  Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies , 2000 .

[165]  S. Seto,et al.  Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe , 1989 .

[166]  B. A. Foreman,et al.  Electrical and crystallographic characterization of CdTe grown by the vapor transport method , 1994 .

[167]  W. Burcham.  Nuclear Physics: An Introduction , 1965 .

[168]  K. Benz,et al.  COMPENSATION MODELS IN CHLORINE DOPED CdTe BASED ON POSITRON ANNIHILATION AND PHOTOLUMINESCENCE SPECTROSCOPY , 1995 .

[169]  Meyer,et al.  Identification of the cadmium vacancy in CdTe by electron paramagnetic resonance. , 1993, Physical review. B, Condensed matter.

[170]  R. Rhodes.  Imperfections and active centres in semiconductors , 1964 .

[171]  M. Bruder,et al.  Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxy , 1990 .

[172]  R. F. Brebrick,et al.  Phase Diagram of the Zn‐Cd‐Te Ternary System , 1970 .

[173]  A. Burger,et al.  Seeded physical vapor transport of cadmium-zinc telluride crystals:growth and characterization , 1997 .

[174]  K. Ishikawa,et al.  Surface second-harmonic generation from two interfaces of polyimide film coated on a substrate , 1997 .

[175]  M. Vandevyver,et al.  Lattice Dynamics of ZnTe and CdTe , 1976 .

[176]  H. B. Barber,et al.  Signals induced in semiconductor gamma-ray imaging detectors , 1999 .

[177]  P. Siffert,et al.  Carbon and silicon in travelling heater method grown semi-insulating CdTe , 1993 .

[178]  E. Molva,et al.  Excited states of Ag and Cu acceptors in CdTe , 1982 .

[179]  F. Rosenberger,et al.  Fundamentals of Crystal Growth I , 1979 .

[180]  P. Y. Yu,et al.  Fundamentals of Semiconductors , 1995 .

[181]  P. Rudolph,et al.  Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the Bridgman method and by the travelling heater method , 1995 .

[182]  Lee,et al.  Room-temperature band-edge photoluminescence from cadmium telluride. , 1994, Physical review. B, Condensed matter.

[183]  E. Weigel,et al.  Comparison of Bridgman and THM method regarding the effect of In doping and distribution of Zn in CdTe , 1996 .

[184]  B. Ridley.  Quantum Processes in Semiconductors , 1982 .

[185]  K. Benz,et al.  Studies of the compensation mechanism in CdTe grown from the vapour phase , 1995 .

[186]  B. Cullity,et al.  Elements of X-ray diffraction , 1957 .

[187]  T. Schlesinger,et al.  Semiconductors for room temperature nuclear detector applications , 1995 .

[188]  Tuviah E. Schlesinger,et al.  Uniformity of Cd1 − xZnxTe grown by high-pressure Bridgman , 1996 .

[189]  Tuviah E. Schlesinger,et al.  Room-temperature photoluminescence mapping of CdZnTe detectors , 1999, Optics & Photonics.

[190]  K. Benz,et al.  Characterization of cadmium telluride crystals grown by different techniques from the vapour phase , 1995 .

[191]  A. Waag,et al.  Halogen doping of II-VI semiconductors during molecular beam epitaxy , 1994 .

[192]  K. Durose,et al.  Structural defects and compositional uniformity in CdTe and Cd1−xZnxTe crystals grown by a vapour transport technique , 1998 .

[193]  E. Y. Lee.  Thermoelectric voltage spectroscopy for studying compensation in semi-insulating wide energy band gap materials , 1999 .

[194]  Daniel L. Rode,et al.  Electron Mobility in II-VI Semiconductors , 1970 .

[195]  K. Lynn,et al.  Crystallographic and metallurgical characterization of radiation detector grade cadmium telluride materials , 1993 .

[196]  R. E. Kremer,et al.  Deep levels in CdTe , 1988 .

[197]  B. Jenichen,et al.  RTK 2-a double-crystal x-ray topographic camera applying new principles , 1988 .

[198]  M. Bavdaz,et al.  Photoluminescence of Cd1-xZnxTe crystals grown by high-pressure Bridgman technique , 1997 .

[199]  A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC , 1999 .

[200]  D. Lang,et al.  Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As , 1979 .

[201]  J. M. Rowe,et al.  Lattice dynamics of cadmium telluride , 1974 .

[202]  H. Sitter,et al.  Photo-EPR and DLTS of CdTe: CO , 1988 .

[203]  S. Sen,et al.  Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process☆ , 1988 .

[204]  F. Szofran,et al.  Thermochemical model of physical vapor transport of cadmium-zinc telluride , 1995 .

[205]  Ralph B. James,et al.  RADIATION DAMAGE MEASUREMENTS IN ROOM-TEMPERATURE SEMICONDUCTOR RADIATION DETECTORS , 1999 .

[206]  G. Brunthaler,et al.  Deep donor levels due to isolated Fe in CdTe , 1985 .

[207]  M. Goorsky,et al.  Characterization of ternary substrate materials using triple axis X-ray diffraction , 1997 .