27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier
暂无分享,去创建一个
W. Schlaak | S. van Waasen | U. Auer | G. Unterborsch | A. Umbach | W. Passenberg | C. Schramm | R. Reuter | G.G. Mekonnen | F.J. Tegude | P. Wolfram | R.M. Bertenburg | H.-G. Back
[1] S. Personick. Receiver design for digital fiber optic communication systems, II , 1973 .
[2] Patrick Fay,et al. 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 mu m wavelength , 1995 .
[3] M. Beck,et al. High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18 GHz bandwidth , 1995 .
[4] M.S. Park,et al. Ultralow noise 10 Gb/s p-i-n-HEMT optical receiver , 1993, IEEE Photonics Technology Letters.
[5] F. Tegude,et al. Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
[6] P.M. Smith,et al. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs , 1990, IEEE Electron Device Letters.
[7] F. Tegude,et al. On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistors , 1995, Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.
[8] Y. Imai,et al. 0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC , 1995 .
[9] G. G. Mekonnen,et al. High-bandwidth 1.55 /spl mu/m waveguide integrated photodetector , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
[10] I. Wolff,et al. Full-Wave Analysis of a Modified Coplanar Air Bridge T-Junction , 1991, 1991 21st European Microwave Conference.
[12] C. S. Aitchison. Potential of the distributed amplifier as a photo-diode detector amplifier in high bit rate optical communication systems , 1990 .