Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition
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[1] Optical Properties of High-Quality Ga1-xInxAs1-ySby/InAs Grown by Liquid-Phase Epitaxy , 1994 .
[2] Krebs,et al. Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect. , 1996, Physical review letters.
[3] M. Mikhailova,et al. Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties , 2001 .
[4] M. L. Tilton,et al. Comparing pseudopotential predictions for InAs/GaSb superlattices , 2002 .
[5] A. Zunger,et al. Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals , 1998 .
[6] Dimitri A. Antoniadis,et al. Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x , 2001 .
[7] Adler,et al. Atomic-scale structure of disordered Ga1-xInxP alloys. , 1995, Physical review. B, Condensed matter.
[8] P. N. Keating,et al. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure , 1966 .
[9] A. J. Williamson,et al. COMPARISON OF TWO METHODS FOR DESCRIBING THE STRAIN PROFILES IN QUANTUM DOTS , 1997, cond-mat/9711126.
[10] A. Zunger,et al. Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method , 2003 .
[11] M. O. Manasreh,et al. Antimonide-Related Strained-Layer Heterostructures , 1997 .
[12] I. Vurgaftman,et al. Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers , 1998 .
[13] Alex Zunger,et al. Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices , 2001 .
[14] Jerry R. Meyer,et al. Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices , 2000 .
[15] Wei,et al. Optical properties of zinc-blende semiconductor alloys: Effects of epitaxial strain and atomic ordering. , 1994, Physical review. B, Condensed matter.
[16] A. Joullié,et al. Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSb , 1987 .
[17] Walter A. Harrison,et al. Electronic structure and the properties of solids , 1980 .
[18] J. Zyskind,et al. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range , 1985 .
[19] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[20] A. Zunger,et al. Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization. , 2001, Physical review letters.
[21] Alex Zunger,et al. Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices , 2002 .
[22] Gail J. Brown,et al. Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation , 2004 .
[23] Joan Adler,et al. Atomic-scale structure of disordered Ga{sub 1{minus}{ital x}}In{sub {ital x}}P alloys , 1995 .
[24] D. W. Kisker,et al. GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy , 1986 .
[25] Brian R. Bennett,et al. Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures , 1998 .
[26] G. A. Baraff,et al. Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers , 1993 .
[27] A. Zunger,et al. Bond lengths around isovalent impurities and in semiconductor solid solutions , 1984 .
[28] Michael S. Shur,et al. LASERS, OPTICS, AND OPTOELECTRONICS 1683 Effect of interface structure on the optical properties of InAs'GaSb laser active regions , 2002 .
[29] L. Vegard,et al. Die Konstitution der Mischkristalle und die Raumfüllung der Atome , 1921 .
[30] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .
[31] I. Vurgaftman,et al. Dependence of type II “W” mid-infrared photoluminescence and lasing properties on growth conditions , 2003 .
[32] A. Zunger,et al. Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/Al{sub x}Ga{sub 1-x}As heterostructures , 2000 .
[33] E. Rashba,et al. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers , 1984 .
[34] A. Williams,et al. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment , 1986 .
[35] A. Zunger,et al. Ground- and excited-state properties of LiF in the local-density formalism , 1977 .
[36] G. B. Stringfellow,et al. OMVPE Growth of Metastable GaAsSb and GaInAsSb Alloys Using TBAs and TBDMSb , 1996 .
[37] Gregory C. Dente,et al. Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers , 1999 .
[38] Christopher L. Felix,et al. Optimum growth parameters for type-II infrared lasers , 1999 .
[39] M. Mikhailova,et al. Type II heterojunctions in the GaInAsSb/GaSb system , 1994 .
[40] Zunger,et al. Electronic structure and density of states of the random Al0.5Ga0.5As, GaAs0.5P0.5, and Ga0.5In0.5As semiconductor alloys. , 1991, Physical review. B, Condensed matter.