Ba5SiO4Cl6:Eu2+: An intense blue emission phosphor under vacuum ultraviolet and near-ultraviolet excitation
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Shuxiu Zhang | Qinghua Zeng | Hiroaki Tanno | Kiichirou Egoshi | Nobutsugu Tanamachi | Q. Zeng | Shuxiu Zhang | Hiroaki Tanno | Kiichiro Egoshi | N. Tanamachi
[1] Yangqing Hou,et al. Effect of Nonstoichiometry on the Deterioration of Eu2+-Doped Hexagonal Aluminate Phosphor for Plasma Display Applications , 2003 .
[2] T. Yasaka,et al. Degradation mechanisms of the blue-emitting phosphor BaMgAl10O17:Eu2+ under baking and VUV-irradiating treatments , 2004 .
[3] D. Jeon,et al. Origin of PL intensity increase of CaMgSi2O6 : Eu2+ phosphor after baking process for PDPs application , 2005 .
[4] T. Jüstel,et al. Optimization of Luminescent Materials for Plasma Display Panels , 2000 .
[5] M. Shimada,et al. Sr3Al10SiO20:Eu2+ as a blue luminescent material for plasma displays , 2002 .
[6] K. Sohn,et al. Luminescence quenching in thermally-treated barium magnesium aluminate phosphor , 2002 .
[7] Htjm Bert Hintzen,et al. Eu‐Doped Barium Aluminum Oxynitride with the β‐Alumina‐Type Structure as New Blue‐Emitting Phosphor , 1999 .
[8] Hiroshi Kobayashi,et al. Mechanism of luminance decrease in BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} phosphor by oxidation , 1998 .
[9] A. Meijerink,et al. Luminescence and temperature dependent decay behaviour of divalent europium in Ba5SiO4X6 (X = Cl, Br) , 1990 .
[10] Takashi Mukai,et al. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes , 1993 .
[11] Morgan Ferguson,et al. Mechanisms of VUV damage in BaMgAl10O17:Eu2+ , 2004 .
[12] L. Alexander,et al. X-Ray diffraction procedures for polycrystalline and amorphous materials , 1974 .