Doped n-Type Silicon (n-Si)

Publisher Summary The importance of knowing optical constants in the case of silicon points out to the technologically important applications of this knowledge, these applications include: (1) the determination of epilayer thickness, (2) the losses in all-silicon integrated optical devices, (3) silicon-wafer thermometry, infrared emissivity, and absorbance enhancement in silicon gratings. This chapter includes an overview of dielectric function partition and the relation of optical constants to the measured optical properties, semiclassical, and quantum absorption theory. It introduces the generalized Drude approximation. Further, the chapter illustrates experimental data and the Drude formula with empirically adjusted parameters. It presents a first-principle theory of free carrier contribution to the optical constants in doped n-type silicon (n-Si), based on the generalized Drude approximation. The chapter also outlines the calculations and emphasizes on the difficulties that the theory faces when being used to describe available experimental data. Electromagnetics of homogeneous material is completely defined by the dielectric function. However, the basic quantity of optics is the complex refractive index.

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