Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (τ<sub>e</sub>) and capture time (τ<sub>c</sub>) in the channel current have a dependence on V<sub>GS</sub>. However, τ<sub>e</sub> in the GIDL current is independent of V<sub>GS</sub> but strongly dependent on the temperature since τ<sub>e</sub> is decreased more significantly with increasing temperature than τ<sub>c</sub>. As V<sub>GS</sub> increases, τ<sub>c</sub> in the GIDL current increases.

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