Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

Superconducting thin films of Dy‐Ba‐Cu‐O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low‐temperature substrate kept below 600 °C followed by an in situ anneal below 400 °C. Thin films of Dy‐Ba‐Cu‐O which were fully superconducting at 40 K have been fabricated by this in situ growth process.