A new inorganic electron resist of high contrast

A novel inorganic electron resist is proposed. It is shown that the electron irradiation on a stacked layer composed of a thin Ag film over a layer of Se‐Ge chalcogenide amorphous glass enhances diffusion of Ag into Se‐Ge glass, in the same manner as in the case of photodoping. The Ag‐doped Se‐Ge film becomes almost insoluble in alkaline solutions. A negative‐type electron resist is realized by applying this effect. This inorganic electron resist is proved to exhibit an extremely high contrast (γ∼8). The sensitivity is 4×10−5 C/cm2 at 5 kV. It is confirmed that fine‐pattern delineation of less than 0.3 μm linewidth is possible.