Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Diodes based on metal-semiconductor interfaces are common place in semiconductor electronics. What happens when the normal metal is replaced by monolayer graphene? A group of physicists at University of Florida experimentally demonstrate that graphene-semiconductor interfaces make interesting diodes for a surprisingly wide variety of semiconductors.

[1]  H. Morkoç,et al.  Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN , 1996 .

[2]  Kwang S. Kim,et al.  Tuning the graphene work function by electric field effect. , 2009, Nano letters.

[3]  Andrew G. Glen,et al.  APPL , 2001 .

[4]  B. Appleton,et al.  Tuning Schottky diodes at the many-layer-graphene/ semiconductor interface by doping , 2011 .

[5]  C. Su,et al.  Transfer printing of graphene strip from the graphene grown on copper wires , 2011, Nanotechnology.

[6]  F. Guinea,et al.  The electronic properties of graphene , 2007, Reviews of Modern Physics.

[7]  S. Banerjee,et al.  Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.

[8]  Carl W. Magnuson,et al.  Graphene films with large domain size by a two-step chemical vapor deposition process. , 2010, Nano letters (Print).

[9]  G. Yi,et al.  Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices , 2010, Science.

[10]  R. T. Tung Formation of an electric dipole at metal-semiconductor interfaces , 2001 .

[11]  Hongwei Zhu,et al.  Graphene/silicon nanowire Schottky junction for enhanced light harvesting. , 2011, ACS applied materials & interfaces.

[12]  S. Lau,et al.  On the low resistance Au/Ge/Pd ohmic contact to n-GaAs , 1996 .

[13]  H. F. Mander,et al.  Physics of Semiconductor Devices, 2nd Edition, S.M. Sze. Wiley, Amsterdam (1981) , 1982 .

[14]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[15]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[16]  H. R. Krishnamurthy,et al.  Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. , 2008, Nature nanotechnology.

[17]  R. T. Tung Recent advances in Schottky barrier concepts , 2001 .

[18]  Kwang S. Kim,et al.  Large-scale pattern growth of graphene films for stretchable transparent electrodes , 2009, Nature.

[19]  J. Bao,et al.  Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization (vol 96, 122106, 2010) , 2009, 0910.4329.

[20]  C. Berger,et al.  Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. , 2004, cond-mat/0410240.

[21]  Chia-Chi Chang,et al.  Graphene-silicon Schottky diodes. , 2011, Nano letters.

[22]  S. Han,et al.  Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC , 2002 .

[23]  K. Jenkins,et al.  Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.

[24]  S. Tongay,et al.  Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates , 2009, 0910.0615.

[25]  Yi Jia,et al.  Graphene‐On‐Silicon Schottky Junction Solar Cells , 2010, Advanced materials.