Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

Contactless electroreflectance (CER) spectroscopy has been applied to study the energy difference between electron subbands in AlInN∕GaInN multiquantum wells (MQWs). Due to the strong built-in electric field, which is typical for III-nitrides, interband transitions between all QW subbands have been clearly observed. The energy difference between electron subbands has been found analyzing the interband transitions between the first hole subband and electron subbands. It has been shown that this difference is consistent with the results obtained by using photoinduced absorption of intersubband transitions. It shows that CER is an excellent method to study the energy difference between electron subbands in Al(In)N∕Ga(In)N QWs.

[1]  James S. Harris,et al.  Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0, 2006 .

[2]  Claire F. Gmachl,et al.  Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers , 2000 .

[3]  Norio Iizuka,et al.  Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells , 1999 .

[4]  Katsumi Kishino,et al.  Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm , 2002 .

[5]  Francois H. Julien,et al.  Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths , 2006 .

[6]  I. Grzegory,et al.  Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths , 2006, SPIE OPTO.

[7]  Esther Baumann,et al.  High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors , 2006 .

[8]  Francois H. Julien,et al.  Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy , 2003 .

[9]  M. Syperek,et al.  Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance , 2006 .

[10]  Yoshiaki Nakano,et al.  Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy , 2003 .

[11]  Vincenzo Fiorentini,et al.  Nonlinear macroscopic polarization in III-V nitride alloys , 2001 .

[12]  Pierre Lefebvre,et al.  Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. , 1998 .

[13]  F. Julien,et al.  Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells , 2006 .

[14]  Norio Iizuka,et al.  Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells , 1997 .

[15]  Marc Ilegems,et al.  Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells , 2005 .

[16]  Esther Baumann,et al.  Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice , 2005 .

[17]  J. Harris,et al.  Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0≤x<0.06 studied by contactless electroreflectance spectroscopy , 2006 .

[18]  Nicolas Grandjean,et al.  Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field , 1999 .

[19]  Claire F. Gmachl,et al.  Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells , 2001 .

[20]  Kei Kaneko,et al.  Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy , 2002 .

[21]  Hong Lu,et al.  Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se , 2003 .

[22]  S. Mikhrin,et al.  Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers , 2006 .