Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT) modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray inductance in the current commutation path in a phase-leg module and hence improves the switching behavior. A P-cell- and N-cell-based module and a conventional module are designed. Using finite-element-analysis-based Ansys Q3D Extractor, electromagnetic simulations are conducted to extract the stray inductance from the two modules. Two prototype phase-leg modules based on the two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. Finally, a double pulse tester based-switching characterization is performed to illustrate the effect of stray inductance reduction in the proposed packaging design. The experimental results show the reduction in overshoot voltage with the proposed layout.

[1]  L. Stevanovic,et al.  Low inductance power module with blade connector , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[2]  Leon M. Tolbert,et al.  Reduction of stray inductance in power electronic modules using basic switching cells , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[3]  D. Boroyevich,et al.  Modeling and measurements of parasitic parameters for integrated power electronics modules , 2004, Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04..

[4]  Y. Arita,et al.  Latest technology improvements of Mitsubishi IGBT modules , 1996 .

[5]  Enrico Dallago,et al.  Analysis of an IGBT power module , 1994, Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics.

[6]  Peng Zhang,et al.  Parasitics considerations for gate drive of IGBT , 2010, 2010 International Conference on Electrical Machines and Systems.

[7]  F.C. Lee,et al.  Measurement-based characterization method for integrated power electronics modules , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[8]  K. D. T. Ngo,et al.  Automatic layout design for power module , 2013, IEEE Transactions on Power Electronics.

[9]  Shengnan Li.  Packaging Design of IGBT Power Module Using Novel Switching Cells , 2011 .

[10]  S. S. Ang,et al.  A 6.5kV wire-bondless, double-sided cooling power electronic module , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

[11]  Uwe Jansen,et al.  Dynamic Voltage Rise Control , the Most Efficient Way to Control Turn – off Switching Behaviour of IGBT Transistors , .

[12]  L. Tolbert,et al.  Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter , 2013, IEEE Transactions on Power Electronics.

[13]  Zheng Chen.  Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .

[14]  Leon M. Tolbert,et al.  P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[15]  K.D.T. Ngo,et al.  SiC Wirebond Multichip Phase-Leg Module Packaging Design and Testing for Harsh Environment , 2010, IEEE Transactions on Power Electronics.

[16]  Fred Wang,et al.  Investigation of Si IGBT operation at 200 °C for traction application , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[17]  Leon M. Tolbert,et al.  Switching cells and their implications for power electronic circuits , 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference.

[18]  J. Roudet,et al.  MOSFET switching behaviour under influence of PCB stray inductance , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[19]  Frédéric Richardeau,et al.  Evaluation of $V_{\rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling , 2013, IEEE Transactions on Industrial Electronics.

[20]  Dushan Boroyevich,et al.  Extraction of parasitics within wire-bond IGBT modules , 1998, APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition.

[21]  Puqi Ning,et al.  Design and Development of High Density High Temperature Power Module with Cooling System , 2010 .

[22]  Masahito Otsuki,et al.  Analysis on the low current turn-on behavior of IGBT module , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[23]  L.M. Tolbert,et al.  Power electronics' circuit topology - the basic switching cells , 2005, IEEE Workshop Power Electronics Education, 2005..

[24]  Zhenxian Liang,et al.  Investigation of Si IGBT Operation at 200$\,{}^\circ$ C for Traction Applications , 2013, IEEE Transactions on Power Electronics.

[25]  Peng Zhang,et al.  Parasitics consideration of layout design within IGBT module , 2011, 2011 International Conference on Electrical Machines and Systems.