Design of a very low-power, low-cost 60 GHz receiver front-end implemented in 65 nm CMOS technology

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale CMOS technologies is going on for some time now. While a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like handheld devices, mobile phones and wireless sensor networks. This article describes the design of a direct conversion receiver front-end that addresses the issue of power consumption, while at the same time permitting low cost (due to area minimization by the use of spiral inductors). It is implemented in a 65 nm CMOS technology. The realized front-end achieves a record power consumption of only 43mW including lownoise amplifier (LNA), mixer, a voltage controlled oscillator (VCO), a local oscillator (LO) buffer and a baseband buffer (without this latter buffer the power consumption is even lower,only 29mW). Its pad-limited size is 0.55×1 mm². At the same time, the front-end achieves state-of-the-art performance with respect to its other properties: Its maximum measured power conversion gain is 30dB, the RF and IF bandwidths are 56.5-61.5 GHz and 0-1.5 GHz, respectively, its simulated minimum noise figure is 8.4 dB and its measured IP-1dB is -36 dBm.

[1]  Jri Lee,et al.  A low-power fully integrated 60GHz transceiver system with OOK modulation and on-board antenna assembly , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[2]  Davide Guermandi,et al.  A wideband mm-Wave CMOS receiver for Gb/s communications employing interstage coupled resonators , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[3]  B. Razavi,et al.  A 60-GHz CMOS receiver front-end , 2006, IEEE Journal of Solid-State Circuits.

[4]  Daniela Dragomirescu,et al.  A wideband single-balanced down-mixer for the 60 GHz band in 65 nm CMOS , 2010, 2010 Asia-Pacific Microwave Conference.

[5]  Shen-Iuan Liu,et al.  A dual-band 61.4∼63GHz/75.5∼77.5GHz CMOS receiver in a 90nm technology , 2008, 2008 IEEE Symposium on VLSI Circuits.

[6]  Daniela Dragomirescu,et al.  A low-power high-gain LNA for the 60 GHz band in a 65 nm CMOS technology , 2009, 2009 Asia Pacific Microwave Conference.

[7]  I. Seto,et al.  A 60-GHz CMOS Receiver Front-End With Frequency Synthesizer , 2008, IEEE Journal of Solid-State Circuits.

[8]  M Kraemer,et al.  A High Efficiency Differential 60 GHz VCO in a 65 nm CMOS Technology for WSN Applications , 2011, IEEE Microwave and Wireless Components Letters.

[9]  S.P. Voinigescu,et al.  30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits , 2005, IEEE Transactions on Microwave Theory and Techniques.

[10]  Davide Guermandi,et al.  A sliding IF receiver for mm-wave WLANs in 65nm CMOS , 2009, 2009 IEEE Custom Integrated Circuits Conference.

[11]  Jri Lee,et al.  A Low-Power Low-Cost Fully-Integrated 60-GHz Transceiver System With OOK Modulation and On-Board Antenna Assembly , 2009, IEEE Journal of Solid-State Circuits.

[12]  M.A.T. Sanduleanu,et al.  CMOS Integrated Transceivers for 60GHz UWB Communication , 2007, 2007 IEEE International Conference on Ultra-Wideband.

[13]  Daniela Dragomirescu,et al.  Accurate electromagnetic simulation and measurement of millimeter-wave inductors in bulk CMOS technology , 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

[14]  S. Gambini,et al.  A 90 nm CMOS Low-Power 60 GHz Transceiver With Integrated Baseband Circuitry , 2009, IEEE Journal of Solid-State Circuits.

[15]  Ali M. Niknejad,et al.  A Highly Integrated 60GHz CMOS Front-End Receiver , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[16]  S.P. Voinigescu,et al.  A 1.2V, 60-GHz radio receiver with on-chip transformers and inductors in 90-nm CMOS , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.