Surface Loss Probability of Nitrogen Atom on Stainless-Steel in N2 Plasma Afterglow

We investigated the loss kinetics of nitrogen (N) atoms in a N2 plasma afterglow using a vacuum ultraviolet absorption spectroscopy technique with an atmospheric-pressure microdischarge hollow cathode lamp. The decay curves of N atom density were fitted with single exponential functions at pressures from 1.33 to 13.3 Pa. The dependence of the decay time constant on the pressure showed that the N atoms were predominantly lost through diffusion to the wall surface. The surface loss probability of N atoms on stainless-steel based on the decay time constant as a function of pressure was estimated to be 0.03.

[1]  M. Hori,et al.  Development of atomic radical monitoring probe and its application to spatial distribution measurements of H and O atomic radical densities in radical-based plasma processing , 2009 .

[2]  Masaru Hori,et al.  Development of measurement technique for carbon atoms employing vacuum ultraviolet absorption spectroscopy with a microdischarge hollow-cathode lamp and its application to diagnostics of nanographene sheet material formation plasmas , 2009 .

[3]  M. Hori,et al.  Insights into sticking of radicals on surfaces for smart plasma nano-processing , 2007 .

[4]  M. Hori,et al.  Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation , 2007 .

[5]  T. Mori,et al.  Nitriding of a tool steel with an electron-beam-excited plasma , 2006 .

[6]  M. Hori,et al.  Progress of radical measurements in plasmas for semiconductor processing , 2006 .

[7]  N. Possémé,et al.  Etching mechanisms of low-k SiOCH and selectivity to SiCH and SiO2 in fluorocarbon based plasmas , 2003 .

[8]  F. Celii,et al.  Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC , 2003 .

[9]  M. Hori,et al.  Etching organic low dielectric film in ultrahigh frequency plasma using N2/H2 and N2/NH3 gases , 2003 .

[10]  M. Hori,et al.  Measurement of oxygen atom density employing vacuum ultraviolet absorption spectroscopy with microdischarge hollow cathode lamp , 2003 .

[11]  Masaru Hori,et al.  Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N2/H2 and N2/NH3 plasmas , 2002 .

[12]  M. Hori,et al.  Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas , 2001 .

[13]  M. Hori,et al.  Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas , 2001 .

[14]  M. Hori,et al.  Formation of silicon nitride gate dielectric films at 300 °C employing radical chemical vapor deposition , 2000 .

[15]  M. Hori,et al.  Loss kinetics of carbon atoms in low-pressure high density plasmas , 2000 .

[16]  J. Coburn,et al.  Recombination coefficients of O and N radicals on stainless steel , 2000 .

[17]  S. Adams,et al.  Surface and volume loss of atomic nitrogen in a parallel plate rf discharge reactor , 2000 .

[18]  M. Hori,et al.  Vacuum ultraviolet absorption spectroscopy employing a microdiacharge hollow-cathode lamp for absolute density measurements of hydrogen atoms in reactive plasmas , 1999 .

[19]  T. Belmonte,et al.  Measurements of nitrogen atom loss probability versus temperature on iron surfaces , 1999 .

[20]  J. Wortman,et al.  Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition , 1999 .

[21]  T. Belmonte,et al.  Measurements of the loss probability of nitrogen atoms versus temperature on various surfaces , 1999 .

[22]  K. Sasaki,et al.  Lifetime Measurements of CFx Radicals and H Atoms in Afterglow of CF4/H2 Plasmas , 1998 .

[23]  M. Pinheiro,et al.  Self-consistent kinetic model of low-pressure - flowing discharges: I. Volume processes , 1998 .

[24]  M. Hori,et al.  A study on the time evolution of surface loss probability on hydrogenated amorphous silicon films in rf discharges using infrared diode-laser absorption spectroscopy , 1998 .

[25]  K. Sasaki,et al.  Kinetics of fluorine atoms in high-density carbon–tetrafluoride plasmas , 1997 .

[26]  J. Perrin,et al.  Surface Reaction Kinetics of CH 3 in CH 4 RF Discharge Studied by Time-Resolved Threshold Ionization Mass Spectrometry , 1997 .

[27]  M. Fewell,et al.  The Low-Pressure Rf Plasma as a Medium for Nitriding Iron and Steel , 1997 .

[28]  C. Suzuki,et al.  Loss Processes of CF and CF 2 Radicals in the Afterglow of High-Density CF 4 Plasmas , 1997 .

[29]  T. Belmonte,et al.  Determination of N and O Atom Density in Ar-N{2}-H{2} and Ar-O{2}-H{2} Flowing Microwave Post Discharges , 1996 .

[30]  J. Amorim,et al.  A spectroscopic study of active species in DC and HF flowing discharges in - and Ar - - mixtures , 1996 .

[31]  Y. Yoshida Characteristics of a nozzle–beam‐type microwave radical source , 1996 .

[32]  A. Tserepi,et al.  Two‐photon absorption laser‐induced fluorescence of H atoms: A probe for heterogeneous processes in hydrogen plasmas , 1994 .

[33]  Y. Hikosaka,et al.  Drastic Change in CF2 and CF3 Kinetics Induced by Hydrogen Addition into CF4 Etching Plasma , 1993 .

[34]  Y. Hatanaka,et al.  Measurements of Radical Beam , 1992 .

[35]  N. Sadeghi,et al.  Oxygen and fluorine atom kinetics in electron cyclotron resonance plasmas by time‐resolved actinometry , 1991 .

[36]  A. Matsuda,et al.  Spatial Distribution of SiH3 Radicals in RF Silane Plasma , 1990 .

[37]  P. J. Chantry,et al.  A simple formula for diffusion calculations involving wall reflection and low density , 1987 .