1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal

kV 4H-SiC JBS rectifiers were fabricated using AlN capped anneal and compared with those annealed conventionally in a furnace. The surface damage during the high temperature activation anneal is significantly reduced using AlN capped anneal. The forward drop of the JBS rectifiers is 1 kV was achieved.