Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding.

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding are proposed. The optical nonreciprocal devices are composed of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure. Nonreciprocal characteristics are obtained by an evanescent field penetrating into the upper magnetic garnet cladding layer. Several kinds of the optical nonreciprocal device are investigated with the magneto-optic waveguide and designed at a wavelength of 1.55 microm. As a preliminary experiment, wafer bonding between Gd3Ga5O12 and Si was studied. Wafer bonding was successfully achieved with heat treatment at 220 degrees C in H2 ambient.

[1]  Bernhard Scholl,et al.  New highly efficient polarization converters based on hybrid supermodes , 1995 .

[2]  Junichi Sasaki,et al.  Hybrid integrated 4/spl times/4 optical matrix switch using self-aligned semiconductor optical amplifier gate arrays and silica planar lightwave circuit , 1998 .

[3]  Yoshiaki Nakano,et al.  Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals , 1999 .

[4]  Tetsuya Mizumoto,et al.  Verification of waveguide type optical circulator operation , 1990 .

[5]  G. Burbach,et al.  Low loss singlemode optical waveguides with large cross-section in silicon-on-insulator , 1991 .

[6]  T. Mizumoto,et al.  Nonreciprocal TE-TM mode converter with semiconductor guiding layer , 2002 .

[7]  Takao Yonehara,et al.  Epitaxial layer transfer by bond and etch back of porous Si , 1994 .

[8]  B. Kurdi,et al.  Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures. , 1988, Optics letters.

[9]  Passive polarization converter in SiON technology , 2001 .

[10]  Y. Naito,et al.  Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy , 1995 .

[11]  J. Castera,et al.  Isolator in integrated optics using the Faraday and Cotton-mouton effects , 1977 .

[12]  Katsutoshi Izumi,et al.  C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon , 1978 .

[13]  A. Koster,et al.  Low-loss optical waveguide on standard SOI/SIMOX substrate , 1998 .

[14]  M. Schlak,et al.  Integrated-optic polarisation convertor on (001)-InP substrate , 1986 .

[15]  Yasuyuki Inoue,et al.  A hybrid integrated waveguide isolator on a silica-based planar lightwave circuit , 1996 .

[16]  J. Lasky.  Wafer bonding for silicon‐on‐insulator technologies , 1986 .

[17]  Shinji Ando,et al.  Thin, flexible waveplate of fluorinated polyimide , 1993 .

[18]  T. Shintaku,et al.  Magneto‐optic channel waveguides in Ce‐substituted yttrium iron garnet , 1993 .

[19]  Tetsuya Mizumoto,et al.  Improved Heat Treatment for Wafer Direct Bonding between Semiconductors and Magnetic Garnets , 1997 .

[20]  M. Bruel.  Silicon on insulator material technology , 1995 .

[21]  M. Jurczak,et al.  Silicon-on-Nothing (SON)-an innovative process for advanced CMOS , 2000 .

[22]  K. Ando,et al.  Waveguide magneto‐optic isolator fabricated by laser annealing , 1988 .

[23]  E. Yablonovitch,et al.  Extreme selectivity in the lift‐off of epitaxial GaAs films , 1987 .

[24]  T. Mizumoto,et al.  Magnetooptic Waveguide with SiO2 Cladding Layer Integrated on InP Substrate by Wafer Direct Bonding , 1997 .

[25]  Y. Bäcklund,et al.  Bond‐Strength Measurements Related to Silicon Surface Hydrophilicity , 1992 .

[26]  M. Abe,et al.  Giant Faraday Rotation of Ce-Substituted YIG Films Epitaxially Grown by RF Sputtering , 1988 .

[27]  M. Razeghi,et al.  Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition , 1986 .

[28]  Y. Naito,et al.  Crystal Growth of InP on a Gd3Ga5O12 Substrate by Organometallic Chemical Vapor Deposition , 1990 .

[29]  T Mizumoto,et al.  Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift. , 2000, Applied optics.

[30]  U. Gösele,et al.  Wafer-Bonding and Thinning Technologies , 1998 .

[31]  Yoshiaki Nakano,et al.  Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding , 1999 .