Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.