On the optical dispersive properties of HgCdTe as a function of depth

An overview of the properties of the absorption coefficient of mercury cadmium telluride that may make this material useful for intrinsic hyperspectral detection is presented. A review of recent work on modeling the absorption coefficient is provided, and new directions for achieving an analytical representation with higher fidelity are suggested.

[1]  Junhao Chu,et al.  Physics and Properties of Narrow Gap Semiconductors , 2007 .

[2]  M. D. Blue Optical Absorption in HgTe and HgCdTe , 1964 .

[3]  Junhao Chu,et al.  Energy gap versus alloy composition and temperature in Hg1−xCdxTe , 1983 .

[4]  M. Carmody,et al.  Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures , 2005 .

[5]  M. Carmody,et al.  Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponse , 2004 .

[6]  S. Guha,et al.  Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail , 2007 .

[7]  Jamie D. Phillips,et al.  Detailed study of above bandgap optical absorption in HgCdTe , 2005 .

[8]  J. Chu,et al.  Intrinsic absorption spectroscopy and related physical quantities of narrow-gap semiconductors Hg1−xCdxTe , 1991 .

[9]  Optical absorption in Hg1−xCdxTe , 1998 .

[10]  J. Chu,et al.  Logarithmic approximation for the energy band in nonparabolic semiconductors , 1998 .

[11]  C. D. Maxey,et al.  Summary of HgCdTe 2D array technology in the U.K. , 2001 .

[12]  J. Phillips,et al.  Optical absorption properties of HgCdTe epilayers with uniform composition , 2003 .

[13]  Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe , 2008 .

[14]  J. Mroczkowski,et al.  Optical absorption edge in Hg0.7 Cd0.3Te , 1983 .

[15]  E. Finkman,et al.  Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects , 1985 .

[16]  M. Carmody,et al.  Determination of individual layer composition and thickness in multilayer HgCdTe structures , 2004 .

[17]  S. Guha,et al.  Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail , 2006 .

[18]  S. Krishnamurthy,et al.  Electronic structure, absorption coefficient, and auger rate in HgCdTe and thallium-based alloys , 1997 .

[19]  Leonid V. Keldysh Behavior of Non-metallic Crystals in Strong Electric Fields , 1958 .

[20]  E. Finkman,et al.  The exponential optical absorption band tail of Hg1−xCdxTe , 1984 .

[21]  S. Krishnamurthy,et al.  Minority carrier lifetimes in HgCdTe alloys , 2006 .

[22]  Junhao Chu,et al.  Band‐to‐band optical absorption in narrow‐gap Hg1−xCdxTe semiconductors , 1992 .

[23]  V. Garber,et al.  Characterization of multilayer HgCdTe heterostructures by differential absorption spectroscopy , 1997 .

[24]  Yael Nemirovsky,et al.  Infrared optical absorption of Hg1−xCdxTe , 1979 .

[25]  W. Anderson,et al.  Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆ , 1980 .

[26]  M. W. Scott Energy Gap in Hg1−xCdxTe by Optical Absorption , 1969 .

[27]  Yi Cai,et al.  Short wavelength Hg1-xCdxTe infrared detectors prepared by loophole technology , 2005, SPIE Optical Systems Design.

[28]  Kun Liu,et al.  Empirical rule of intrinsic absorption spectroscopy in Hg1−xCdxTe , 1994 .

[29]  Michael A. Kinch HDVIP FPA technology at DRS Infrared Technologies , 2001, SPIE Defense + Commercial Sensing.

[30]  F. Urbach The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids , 1953 .

[31]  S. Krishnamurthy,et al.  Near band edge absorption spectra of narrow‐gap III–V semiconductor alloys , 1996 .

[32]  V. Garber,et al.  Monitoring HgCdTe layer uniformity by the differential absorption technique , 1996 .

[33]  B. Sharma,et al.  Observation of below band gap photoconductivity in mercury cadmium telluride , 1994 .

[34]  E. Kane,et al.  Band structure of indium antimonide , 1957 .

[35]  Modeling of Recombination in HgCdTe , 2008 .