Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction

We have studied semi-insulating (001) GaAs wafers implanted with 70 MeV 120Sn ions to various doses ranging from 5 × 1012 to 5 × 1014 ions cm−2 following the procedures in our earlier work, Nair et al (2001 Nucl. Instrum. Methods B 184 515–22). The sample curvature is studied at various doses and compared with the theoretically expected values. Also, a survey of some reported implantations with similar experimental data has been carried out for comparison. The bending of the sample, related to defects and linear dislocation density due to implantation, is modelled and compared with the estimates for the same by x-ray diffraction. The samples have been annealed using a rapid thermal annealing system and the variation in curvature and dislocation density with annealing temperature has been studied.

[1]  K. Chandrasekaran,et al.  High resolution XRD study of GaAs implanted with 50 MeV 120Sn ions , 2001 .

[2]  R. N. Kyutt,et al.  Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films , 2000 .

[3]  U. Zeimer,et al.  High-resolution x-ray diffraction investigations of He-implanted GaAs , 2000 .

[4]  M. Bianconi,et al.  Damage profiles in high-energy As implanted Si , 2000 .

[5]  Oliver Ambacher,et al.  Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry , 1998 .

[6]  B. Mensching,et al.  Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization , 1998 .

[7]  A. Krotkus,et al.  Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions , 1997 .

[8]  M. Bianconi,et al.  Damage profiles in as-implanted 〈100〉 Si crystals: strain by X-ray diffractometry versus interstitials by RBS-channeling , 1996 .

[9]  S. Milita,et al.  Damage in ion implanted silicon measured by x‐ray diffraction , 1996 .

[10]  Ehrhart,et al.  Point defects and their reactions in e--irradiated GaAs investigated by x-ray-diffraction methods. , 1996, Physical review. B, Condensed matter.

[11]  A. Christou,et al.  X‐ray double‐crystal analysis of misorientation and strain in GaAs/Si and related heterostructures , 1993 .

[12]  Cynthia A. Volkert,et al.  Stress and plastic flow in silicon during amorphization by ion bombardment , 1991 .

[13]  P. Fewster.  A high‐resolution multiple‐crystal multiple‐reflection diffractometer , 1989 .

[14]  G. Mehta,et al.  15 UD Pelletron of the Nuclear Science Centre — status report , 1988 .

[15]  C. R. Wie,et al.  Dynamical x‐ray diffraction from nonuniform crystalline films: Application to x‐ray rocking curve analysis , 1986 .

[16]  Wie,et al.  MeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect production. , 1986, Physical review. B, Condensed matter.

[17]  W. D. Johnston,et al.  Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy , 1985 .

[18]  B. Arora,et al.  Design of microprocessor controlled RTA system for processing of ion implanted semiconductor materials , 2002 .

[19]  John E. Ayers,et al.  The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction , 1994 .

[20]  R. Gwilliam,et al.  X-ray and channeling analysis of ion implanted gallium arsenide , 1993 .