论文信息 - Small Signal Parameters Extraction for Silicon MOS Transistors

Small Signal Parameters Extraction for Silicon MOS Transistors

We present in this paper a new extraction procedure for MOS transistors. We deal mainly with extrinsic parameters determination, straightforwardly obtained from S-parameters measurements at cold biases (Vds = OV). We apply our procedure to a MOSFET implemented on SOI substrate.

[1] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .

[2] J. Raskin,et al. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling , 1998 .

[3] N. Camilleri,et al. Silicon MOSFETs, the microwave device technology for the 1990s , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[4] G.J. Hu,et al. Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's , 1987, IEEE Transactions on Electron Devices.