论文信息 - Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms - 字舞流文

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

C. Hwang | S. Ivanov | Taehong Gwon | Sijung Yoo | C. Yoo | Taeyong Eom | Manchao Xiao | Sanggyun Kim | Iain Buchanan | Eui-Sang Park | Moonseok Kim