Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors (MISFETs). MISFETs with 2.2‐μm gate lengths fabricated by a self‐aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.

[1]  H. Morkoç,et al.  Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors , 1992 .

[2]  John Reed,et al.  A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation , 1992 .

[3]  H. Morkoç,et al.  Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density , 1992 .

[4]  H. Morkoç,et al.  Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane , 1991 .

[5]  A. Paccagnella,et al.  Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs , 1991 .

[6]  E. Ohue,et al.  Characterization of InGaAs surface passivation structure having an ultrathin Si interface control layer , 1990 .

[7]  S. Matsui,et al.  Performance of a Focused-Ion-Beam Implanter with Tilt-Writing Function , 1989 .

[8]  H. Beneking,et al.  Ga/sub 0.47/In/sub 0.53/As enhancement- and depletion-mode MISFETs with very high transconductance , 1989 .

[9]  J. Batey,et al.  Unpinned GaAs MOS capacitors and transistors , 1988, IEEE Electron Device Letters.

[10]  S. Narayan,et al.  High-efficiency GaInAs Microwave MISFET's , 1987, IEEE Electron Device Letters.

[11]  S. Gourrier,et al.  Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors , 1986 .

[12]  S. Narayan,et al.  Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface , 1984 .