AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

To realize broad-band ISDN, various kinds of monolithic ICs for high-speed optical transmission systems have been developed. Compound semiconductor HBT ICs are expected to be candidates for this kind of system because of their excellent microwave perfoffnance and large current driving capabilities.[1]-t6l As key componenr ICs for this system, a preamplifier, a laser driver, a differential amplifier, and a D-F/F have been newly developed using our HBT fabrication process, which brings about high uniformities.[1] Excellent highfrequency performance over a 10-Gb/s operating range was obtained for all fabricated ICs.