论文信息 - Piezoelectric charge densities in AlGaN/GaN HFETs

Piezoelectric charge densities in AlGaN/GaN HFETs

New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of /spl sim/5/spl times/10/sup 13/ cm/sup -2/ x/sub Al/ (where x/sub Al/ is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

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