论文信息 - Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells - 字舞流文

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

R. Hey | K. Ploog | M. Ramsteiner | L. Däweritz | M. Wassermeier | I. Gorbunova

[1] T. Fukui,et al. Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment , 1996 .

[2] Lin-wang Wang,et al. Electronic consequences of random layer‐thickness fluctuations in AlAs/GaAs superlattices , 1995 .

[3] H. Raidt,et al. Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy , 1995 .

[4] E. Betzig,et al. Near-Field Spectroscopy of the Quantum Constituents of a Luminescent System , 1994, Science.

[5] G. Abstreiter,et al. Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities , 1994 .

[6] K. Ploog,et al. In situ technique for measuring Ga segregation and interface roughness at GaAs/AlGaAs interfaces , 1994 .

[7] M. Pashley,et al. Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy , 1991 .