An atomistic simulator for thin film deposition in three dimensions

We describe an atomistic simulator for thin film deposition in three dimensions (ADEPT). The simulator is designed to bridge the atomic and mesoscopic length scales by using efficient algorithms, including an option to speed up surface diffusion using events with multiple diffusion hops. Sputtered particles are inserted and assigned ballistic trajectories with angular distributions appropriate for magnetron sputtering. Atoms on the surface of the film execute surface diffusion hops with rates that depend on the local configuration, and are consistent with microscopic reversibility. The potential energies are chosen to match information obtained from a database of first principles and molecular dynamics (MD) calculations. Efficient computation is accomplished by selecting atoms with probabilities that are proportional to their hop rates. A first implementation of grain boundary effects is accomplished by including an orientation variable with each occupied site. Energies and mobilities are assigned to atom...

[1]  Haydn N. G. Wadley,et al.  A MOLECULAR DYNAMICS STUDY OF NICKEL VAPOR DEPOSITION: TEMPERATURE, INCIDENT ANGLE, AND ADATOM ENERGY EFFECTS , 1997 .

[2]  Y. G. Yang,et al.  A Monte Carlo simulation of the physical vapor deposition of nickel , 1997 .

[3]  A. Neureuther,et al.  A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithography , 1979, IEEE Transactions on Electron Devices.

[4]  Scheffler,et al.  Ab initio calculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growth. , 1996, Physical review. B, Condensed matter.

[5]  Wright,et al.  Density-functional calculations for grain boundaries in aluminum. , 1994, Physical review. B, Condensed matter.

[6]  Jack M. Blakely,et al.  Surface physics of materials , 1975 .

[7]  James P. McVittie,et al.  SPEEDIE: a profile simulator for etching and deposition , 1991, Other Conferences.

[8]  G. Hasson,et al.  Interfacial energies of tilt boundaries in aluminium. Experimental and theoretical determination , 1971 .

[9]  Michael J. Brett,et al.  Ballistic deposition simulation of via metallization using a quasi-three-dimensional model , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[10]  J. Sethian Level set methods : evolving interfaces in geometry, fluid mechanics, computer vision, and materials science , 1996 .

[11]  T. Cale,et al.  A unified line‐of‐sight model of deposition in rectangular trenches , 1990 .

[12]  W. Mullins Theory of Thermal Grooving , 1957 .

[13]  James B. Adams,et al.  Interatomic Potentials from First-Principles Calculations: The Force-Matching Method , 1993, cond-mat/9306054.

[14]  J. Frenken,et al.  Observation of surface melting. , 1985, Physical review letters.

[15]  G. H. Gilmer,et al.  Simulation of Crystal Growth with Surface Diffusion , 1972 .

[16]  A. Sutton,et al.  Overview no. 61 On geometric criteria for low interfacial energy , 1987 .