High‐rate (∼50‐Å/s) deposition of ZnO films for amorphous silicon alloy solar‐cell back‐reflector application

Back reflectors have been fabricated by the deposition of ZnO films on textured Ag films. High deposition rates of ∼50 A/s have been achieved by the dc magnetron sputtering technique. The ZnO target used has been prepared in our laboratory. Amorphous silicon alloy solar cells have been deposited on the ZnO/textured Ag back reflector. Control samples have been prepared by the deposition of identical cells on the same back reflector, but in which the ZnO films have been prepared by a low‐rate ∼5‐A/s rf sputtering process. The short‐circuit current density, which has been used as the primary test parameter for evaluating the back reflectors, is slightly superior in the case of the high‐rate ZnO back reflector. The high‐rate deposition process is, therefore, attractive for large‐volume production application.