HEMT 60 GHz amplifier

A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.

[1]  K. Nakano,et al.  Low Noise High Electron Mobility Transistors , 1984, 1984 IEEE MTT-S International Microwave Symposium Digest.

[2]  J.M. Schellenberg,et al.  A 60 GHz GaAs FET Amplifier , 1983, 1983 IEEE MTT-S International Microwave Symposium Digest.