A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

Abstract A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation – without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips.

[1]  Steven T. Peake,et al.  Power semiconductor devices , 1995 .

[2]  J.-L. Schanen,et al.  Use of Accurate Chip Level Modeling and Analysis of a Power Module to establish Reliability Rules , 2006, 2006 IEEE International Symposium on Industrial Electronics.

[3]  H. Kuhn,et al.  On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters , 2009, 2009 13th European Conference on Power Electronics and Applications.

[4]  L. Ran,et al.  Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.

[5]  B. Allard,et al.  Choosing a thermal model for electrothermal simulation of power semiconductor devices , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[6]  L. Dupont,et al.  Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.

[7]  Luca Konig,et al.  Design With Operational Amplifiers And Analog Integrated Circuits , 2016 .

[8]  C Mark Johnson,et al.  Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.

[9]  Uwe Scheuermann,et al.  Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement , 2009, 2009 13th European Conference on Power Electronics and Applications.

[10]  M. Vellvehi,et al.  Transmission Fabry–Pérot interference thermometry for thermal characterization of microelectronic devices , 2006 .

[11]  R. Tibshirani Regression Shrinkage and Selection via the Lasso , 1996 .

[12]  S. Sze Semiconductor Devices: Physics and Technology , 1985 .

[13]  Wolfgang Fichtner,et al.  New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions , 2006, Microelectron. Reliab..

[14]  Alberto Castellazzi,et al.  Robustness test and failure analysis of IGBT modules during turn-off , 2007, Microelectron. Reliab..

[15]  Wolfgang Fichtner,et al.  A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors , 2002, Microelectron. Reliab..

[16]  Elizabeth A. Peck,et al.  Introduction to Linear Regression Analysis , 2001 .

[17]  Michel Mermet-Guyennet,et al.  Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current , 2006, Microelectron. Reliab..