A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off
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Iulian Nistor | Daniele Angelosante | E. Bianda | F. Zurfluh | Vinoth K. Sundaramoorthy | R. Bloch | G. J. Riedel | G. Knapp | A. Heinemann | E. Bianda | I. Nistor | V. Sundaramoorthy | R. Bloch | G. Riedel | F. Zurfluh | A. Heinemann | G. Knapp | Daniele Angelosante
[1] Steven T. Peake,et al. Power semiconductor devices , 1995 .
[2] J.-L. Schanen,et al. Use of Accurate Chip Level Modeling and Analysis of a Power Module to establish Reliability Rules , 2006, 2006 IEEE International Symposium on Industrial Electronics.
[3] H. Kuhn,et al. On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters , 2009, 2009 13th European Conference on Power Electronics and Applications.
[4] L. Ran,et al. Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.
[5] B. Allard,et al. Choosing a thermal model for electrothermal simulation of power semiconductor devices , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).
[6] L. Dupont,et al. Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.
[7] Luca Konig,et al. Design With Operational Amplifiers And Analog Integrated Circuits , 2016 .
[8] C Mark Johnson,et al. Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.
[9] Uwe Scheuermann,et al. Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement , 2009, 2009 13th European Conference on Power Electronics and Applications.
[10] M. Vellvehi,et al. Transmission Fabry–Pérot interference thermometry for thermal characterization of microelectronic devices , 2006 .
[11] R. Tibshirani. Regression Shrinkage and Selection via the Lasso , 1996 .
[12] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[13] Wolfgang Fichtner,et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions , 2006, Microelectron. Reliab..
[14] Alberto Castellazzi,et al. Robustness test and failure analysis of IGBT modules during turn-off , 2007, Microelectron. Reliab..
[15] Wolfgang Fichtner,et al. A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors , 2002, Microelectron. Reliab..
[16] Elizabeth A. Peck,et al. Introduction to Linear Regression Analysis , 2001 .
[17] Michel Mermet-Guyennet,et al. Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current , 2006, Microelectron. Reliab..