Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation

A measurement method has been developed that can estimate carrier lifetimes and internal quantum efficiency (IQE) in semiconductor materials at room temperature. From the analysis of time-resolved photoluminescence (TRPL) response based on the carrier rate equation, the physical meaning of the TRPL response is clarified and expressions for carrier lifetimes and IQE are obtained. It is found that the final stage of the TRPL response is mainly governed by the non-radiative recombination carrier lifetime. The proposed analysis model is applied to the TRPL measurement results on InGaN-based quantum-well structures, and the non-radiative carrier lifetime and IQE of the measured samples are determined.

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