A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy

Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CMOS processes requires that the physics of image formation in scanning electron microscopy (SEM) being modeled to extract critical dimensions. In this paper, a novel Monte Carlo simulation code based on the energy straggling principle is presented, which includes original physical models for electron scattering, the use of a standard Monte Carlo code for tracking and scoring, and the coupling with a numerical device simulator to calculate charging effects.

[1]  David C. Joy,et al.  Monte Carlo Modeling for Electron Microscopy and Microanalysis , 1995 .

[2]  Hideaki Abe,et al.  Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect , 2007, SPIE Advanced Lithography.

[3]  Michael T. Postek,et al.  Scanning electron microscope dimensional metrology using a model‐based library , 2005 .

[4]  T E Everhart,et al.  The scanning electron microscope. , 1972, Scientific American.

[5]  Jeremiah R. Lowney,et al.  Monte Carlo modeling of secondary electron imaging in three dimensions , 2007, SPIE Advanced Lithography.

[6]  Andrew G. Glen,et al.  APPL , 2001 .

[7]  Andras E. Vladar,et al.  Inverse scattering approach to SEM linewidth measurements , 1999, Advanced Lithography.

[8]  Wolfgang Fichtner,et al.  Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy , 2010 .

[9]  John S. Villarrubia,et al.  Dimensional metrology of resist lines using a SEM model-based library approach , 2004, SPIE Advanced Lithography.

[10]  Ivan W. Selesnick,et al.  The double-density dual-tree DWT , 2004, IEEE Transactions on Signal Processing.

[11]  C. G. Frase,et al.  Model-based SEM for dimensional metrology tasks in semiconductor and mask industry , 2009 .

[12]  Jeremiah R. Lowney,et al.  Scanning electron microscope analog of scatterometry , 2002, SPIE Advanced Lithography.

[13]  John S. Villarrubia,et al.  Sensitivity of SEM width measurements to model assumptions , 2009, Advanced Lithography.

[14]  M. Dapor.  Energy loss spectra of low primary energy (E0 ≤ 1 keV) electrons backscattered by silicon dioxide , 2006 .

[15]  J. Sempau,et al.  PENELOPE-2006: A Code System for Monte Carlo Simulation of Electron and Photon Transport , 2009 .