论文信息 - Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors - 字舞流文

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

C. Bongiorno | S. Lorenti | G. Nicotra | F. Giannazzo | F. Roccaforte | F. Iucolano | P. Fiorenza | M. Vivona | A. Severino