Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle

The invention discloses a two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for an electric vehicle, belonging to the products of vehicle electronic elements and mainly solving the technical problem of drive control of the electric vehicle. The technical scheme is as follows: a DC/DC conversion circuit 1 is connected with two IGBT drive circuits 3 and 4, a level matching circuit 2 is connected with the DC/DC conversion circuit and the two IGBT drive circuits 3 and 4, and each leading-out circuit line is connected into a pin header. The product of the invention can be used for power drive control of the electric vehicle.