Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

This paper describes the I-V characteristics obtained from a 4H-SiC current limiting device. Some specific aspects of the specific on-resistance are discussed in simulation with the DESSIS ISE software. The device behavior places it in the field of the best implanted channel MOSFET (IC-MOSFET) obtained in the literature. The best on-resistance measured is 13 m/spl Omega/cm/sup 2/ and the saturation current density reaches 900 Acm/sup -2/.

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