Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Current pulse driven N´eel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the N´eel vector of epitaxial thin films of the prototypical compound Mn 2 Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of ≈ 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a N´eel spin-orbit torque acting on the domain walls.

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