Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM

The electrical properties of nitrided oxide systems as a function of process conditions were examined. In terms of electron trapping, the observed results can be explained by the existence of two different traps: intrinsic and high field generated traps. The densities of these traps are determined by the nitridation condition and subsequent heat cycles. The lowest density of electron traps was observed in an annealed nitrided oxide (NO). The results also have implications for radiation damage and hot electron channel degradation in thin gate dielectrics. Under very high electric fields, destructive breakdowns were observed for nitrided oxide, probably due to the absence of electron traps. Such breakdowns restrict the design of EEPROM's using such dielectrics.

[1]  S. Lai,et al.  Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[2]  Donald R. Young,et al.  Reduction of electron trapping in silicon dioxide by high‐temperature nitrogen anneal , 1981 .

[3]  D. W. Ormond,et al.  Use of electron‐trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures , 1977 .

[4]  D. Dimaria,et al.  THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON , 1978 .

[6]  Takashi Ito,et al.  Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas , 1980 .

[7]  E. Harari.  Dielectric breakdown in electrically stressed thin films of thermal SiO2 , 1978 .

[8]  S. Lai,et al.  Two‐carrier nature of interface‐state generation in hole trapping and radiation damage , 1981 .

[9]  Paul M. Solomon,et al.  High‐field electron trapping in SiO2 , 1977 .

[10]  C.H. Huang,et al.  High-field generation of electron traps and charge trapping in ultra-thin SiO2 , 1981, 1981 International Electron Devices Meeting.

[11]  Takashi Ito,et al.  Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas , 1980 .

[12]  S. Senturia,et al.  Radiation effects in nitrided oxides , 1983, IEEE Electron Device Letters.

[13]  Charles G. Sodini,et al.  Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's , 1983 .

[14]  D. Dimaria,et al.  Graded or stepped energy band‐gap‐insulator MIS structures (GI‐MIS or SI‐MIS) , 1979 .