Formation specifity of InAs/GaAs submonolayer superlattice

Heterostructures with submonolayer insertions attract interest due to optical properties and to possibility of the studying of the self-organization effect. Besides, investigation of SML heterostructures is retarded as consequence of problems of the structural and composition characterization. The situation is changed on account of development of quantitative methods for HREM image analysis. There formation of superlattice heterostructures with InAs submonolayer insertions in GaAs matrix and them optical properties are investigated in the work.