Double-sided CMOS fabrication technology

The focus of this research is the investigation of double-sided CMOS technology. Both Double-Gate (DG) MOSFETs and Double-Sided Interconnects (DSI), collectively referred to as double-sided CMOS, are being examined as extensions of planar CMOS technology with the potential to increase performance and packing density over conventional techniques. The goal of this work is to investigate and develop fabrication technology for double-sided CMOS. Thesis Supervisor: Dimitri A. Antoniadis Title: Professor

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