Preparation of titanium-oxide films by solid-state reactions of titanium/silicon-oxide/silicon structures

Abstract Titanium films were deposited in a vacuum on thermally oxidized silicon. When the titanium/silicon-oxide/silicon structures were heated in oxygen to temperatures of 800–1000°C, titanium oxide films grew on the silicon substrates by a solid-state reaction that involved titanium atoms substituting silicon atoms in silicon oxide. The thickness of the titanium oxide films increased proportionally to that of deposited titanium films. The dielectric constant, resistivity, and breakdown field strength were significantly influenced by treating temperature. The 1000°C-prepared TiO2 films had the dielectric constant of (15–25) eo, the resistivity of 1010 Ω cm, and the breakdown field strength around 106 V/cm.